Surfactant-mediated epitaxy of metastable SnGe alloys
نویسندگان
چکیده
An effective method for molecular beam epitaxial construction of metastable, pseudomorphic SnGe/ Ge~001! heterostructures is presented. This method exploits a surfactant species, Bi, to alter Sn surface-segregation kinetics. Using the x-ray standing wave technique, we demonstrate not only that Bi segregates to the growth surface more strongly than Sn, but that it also dramatically suppresses the segregation mobility of Sn. The limited Sn diffusivity, which is believed to stem from the full coordination of subsurface Sn atoms, allows the epitaxy of well-ordered, metastable SnGe heterostructures. © 1996 American Institute of Physics. @S0003-6951~96!05133-9#
منابع مشابه
Local order measurement in SnGe alloys and monolayer Sn films on Si with reflection electron energy loss spectrometry
Measurements of local order are demonstrated in Sn-containing alloys and epitaxial monolayer thickness films by analysis of extended-edge energy loss fine structure ~EXELFS! data obtained by reflection electron energy loss spectrometry ~REELS!. These measurements of short-range order provide a complement to the chemical information obtained with REELS and long-range order obtained using reflect...
متن کاملHybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge12xSnx alloys on Ge„001...231
Fully-strained single-crystal metastable Ge12xSnx alloys were grown on Ge~001! up to their critical epitaxial thickness values tepi(x) in order to probe surface roughening pathways leading to heteroepitaxial breakdown during low-temperature molecular-beam epitaxy under large compressive strain. All films with x.0.09 have comparable roughnesses while films with x,0.09 are considerably rougher wi...
متن کاملSb surfactant - mediated SiGe graded layers for Ge photodiodes integrated on
High-quality SiGe and Ge thin films were grown on Si substrates by molecular-beam epitaxy using a technique that combines SiGe composition grading and Sb surfactant mediation. Both transmission electron microscopy and Schimmel defect etch measurements show that the Sb surfactant-mediated SiGe graded buffer layers have lower dislocation densities than those without an Sb surfactant. A systematic...
متن کاملScGaN Alloy Growth by Molecular Beam Epitaxy: Evidence for a Metastable Layered Hexagonal Phase
Alloy formation in ScGaN is explored using rf molecular beam epitaxy over the Sc fraction range x = 0-100%. Optical and structural analysis show separate regimes of growth, namely I) wurtzite-like but having local lattice distortions in the vicinity of the ScGa substitutions for small x (x ≤ 0.17), II) a transitional regime for intermediate x, and III) cubic, rocksalt-like for large x (x ≥ 0.54...
متن کاملScaling of submonolayer island sizes in surfactant-mediated epitaxy of semiconductors
We study submonolayer island size distributions in the epitaxy of Si and Ge on the Si(111) surface with Bi as a surfactant. We show that sizes of Si islands at different growth temperatures scale to a standard scaling function that peaks at the mean island size. Size distribution of Ge islands demonstrates qualitatively different behavior: With the decreasing temperature the most probable size ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1996